Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

By S. Ghetmiri, W. Du, J. Margetis, A. Mosleh, Larry C. Cousar, B. Conley, L. Domulevicz, A. Nazzal, Greg Sun, Richard A. Soref and 4 more. 2014

209 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/14aa54262bc256d1945506a1ae53bbb38ccb8b7d