Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 /spl mu/m CMOS process

By C. Richier, P. Salome, G. Mabboux, I. Zaza, A. Juge, P. Mortini. Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476), 2000

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/14544b802520907a4a7873d442ffd5ddcd3361e4