Defect-free InP nanowires grown in [001] direction on InP (001)
By U. Krishnamachari, Magnus Borgström, B. Ohlsson, N. Panev, Lars Samuelson, W. Seifert, M. Larsson, L. Wallenberg. 2004
177 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/142b8bc88b84b573c2f8354ea3d2772a210c5313
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism (2011, methodology): “showed that InP NWs could grow in the technologically relevant 〈0 0 1〉 direction in MOVPE by avoiding a pre-growth annealing step and using poly-L-Lysine surface pretreatment [110].”
- III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “However, the preferred growth direction can depend on a wide variety of growth conditions, substrate preparation and pre-nucleation conditions [74–80].”