A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

By Jonathan E. Green, J. Choi, Akram Boukai, Y. Bunimovich, E. Johnston-Halperin, E. Deionno, Yi Luo, Bonnie A. Sheriff, Ke Xu, Y. Shin and 3 more. Nature, 2007

1,067 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/141aadae55ee9171127760e703a494ae7d6f7cbb

How researchers see this paper

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In Electrical and Electronic Engineering

1. B. Linares‐Barranco
2. T. Serrano‐Gotarredona
3. J. Joshua Yang
4. Qiangfei Xia
5. Luis A. Camuñas-Mesa
6. Carlos Zamarreño-Ramos
7. José Antonio Pérez-Carrasco
8. Hao Jiang

Citations in the corpus

• On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex (2011, background): “Regarding the wiring density of synaptic memristors, a pitch of 100 nm is conservatively realistic for present day technologies (Jung et al., 2006; Green et al., 2007), while the near future might bring us closer 10 nm (Jeon et al., 2010).”