Controlled synthesis of transition metal dichalcogenide thin films for electronic applications

By Riley Gatensby, Niall McEvoy, Kangho Lee, T. Hallam, N. Berner, E. Rezvani, S. Winters, M. O'Brien, Georg S. Duesberg. 2014

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/13cb07dac575b9d7d1b38bdd03316c797fb804e3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Francesco Bonaccorso
2. Andrea C. Ferrari
3. C. Backes
4. Xiaodong Zhuang
5. A. Ciesielski
6. Paolo Samorì
7. A. Castellanos-Gómez
8. Xinliang Feng

In Materials Chemistry

1. Kostas Kostarelos
2. M. Prato
3. Francesco Bonaccorso
4. A. Bianco
5. A. Castellanos-Gómez
6. Jonathan N. Coleman
7. Andrea C. Ferrari
8. Paolo Samorì

Citations in the corpus

• Production and processing of graphene and related materials (2020, methodology): “[1093] of transition metals is one such technique.”
• Two-Dimensional Materials for Sensing: Graphene and Beyond (2015, background): “co-workers [154] proposed a facile route for fabricating devices from MoS2 and WS2, grown by vapor phase sulfurization of pre-deposited metal layers which allows the production of highly homogenous TMD films over large areas with fine control of thickness from bulk to monolayer.”