Stacking order dependent electric field tuning of the band gap in graphene multilayers

By A. A. Avetisyan, B. Partoens, François M. Peeters. 2010

135 citations recorded by the source corpus.

The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/12c920f3e60b7473298557f929805c39362230b7

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In Atomic and Molecular Physics, and Optics

K. Mak

In Materials Chemistry

Citations in the corpus

Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing (2015, background): “In the case of bilayer graphene, one must know that its bandgap, like graphene, is also zero but by applying an electric field to it, a charge density would appear at the surface and will shift the Fermi level which in turn creates a gap between the valence and conduction band in the energy diagram ”
Observation of an electrically tunable band gap in trilayer graphene (2011, background): “However, few-layer graphene materials under the application of a symmetry-lowering perpendicular electric field may exhibit an induced ga”