Analysis of multicrystalline silicon solar cells by modified 3-diode equivalent circuit model taking leakage current through periphery into consideration

By K. Nishioka, N. Sakitani, Y. Uraoka, T. Fuyuki. 2007

322 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

A three diode model for industrial solar cells and estimation of solar cell parameters using PSO algorithm (2015, methodology): “[28] have proposed a three-diode equivalent circuit model for multi-crystalline silicon solar cells of small size (3 mm 3 mm), to take care of leakage current through periphery; the n values (n1, n2 and n3) for the three diodes have been taken by them as 1, 2 and 2.”
Modeling and simulation of photovoltaic (PV) system during partial shading based on a two-diode model (2011, background): “Another approach to describe the two-diode model is by investigating its physical characteristics such as the electron diffusion coefficient, minority carrier’s lifetime, intrinsic carrier density and other semiconductor parameters [21–24].”
Modeling and circuit-based simulation of photovoltaic arrays (2009, methodology): “In [7] a three-diode model is proposed to include the influence of effects which are not considered by the previous models.”