Photogating in Low Dimensional Photodetectors

By Hehai Fang, Weida Hu. Advancement of science, 2017

843 citations recorded by the source corpus.

Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/12ab9b7124f7002eb9d9ca8922ba9e151cf168aa

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In Biomedical Engineering

1. Zhi Zheng
2. Yong Zhang
3. Takashi Taniguchi
4. Weilie Zhou
5. Xiaotao Zu

In Materials Chemistry

1. Feng Miao
2. Zhi Zheng
3. Xiaomu Wang
4. Yong Zhang
5. Takashi Taniguchi
6. Weilie Zhou
7. Xiaotao Zu
8. Huafeng Yang

Citations in the corpus

• Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor (2020, positive): “Two-dimensional (2D) materials with atomic thickness and flatness have shown great potential for numerous applications in electronics (14-17) and optoelectronics (18-20).”
• Rational design of type-II nano-heterojunctions for nanoscale optoelectronics (2020, background): “Recently, photodetectors based on photogating have gained increasing interest owing to their high responsivity, which is attributed to high photoconductive gain [157].”