Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates.

By PingAn Hu, Lifeng Wang, M. Yoon, Jia Zhang, W. Feng, Xiaona Wang, Zhenzhong Wen, J. Idrobo, Y. Miyamoto, D. Geohegan and 1 more. Nano letters (Print), 2013

758 citations recorded by the source corpus.

The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates. Highly crystalline, exfoliated GaS nanosheets are promising for optoelectronics due to strong absorption in the UV-visible wavelength region. Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate (PET) substrates exhibit a photoresponsivity at 254 nm up to 4.2 AW(-1) and 19.2 AW(-1), respectively, which exceeds that of graphene, MoS2, or other 2D material-based devices. Additionally, the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7 dB and 78.73 dB, respectively. Both surpass that of currently exploited InGaAs photodetectors (66 dB). Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents. Double-peak VBMs are theoretically predicted for ultrathin GaS nanosheets (thickness less than five monolayers), which is found to promote photon absorption. These theoretical and experimental results show that GaS nanosheets are promising materials for high-performance photodetectors on both conventional silicon and flexible substrates.

Subfields: Biomedical Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/125a46c8d2babd970277a259a9ba1d3ba5124e4f

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In Biomedical Engineering

1. K. Novoselov
2. Takashi Taniguchi
3. Zhenhua Ni
4. Kenji Watanabe
5. A. Mishchenko
6. PingAn Hu
7. Kai Xiao
8. Yi Cui

In Electronic, Optical and Magnetic Materials

1. Takashi Taniguchi
2. Kenji Watanabe
3. Yi Cui
4. A. C. Castro Neto
5. Hao Lu
6. Liang Li
7. K. Novoselov
8. Wei Tian

In Materials Chemistry

1. K. Novoselov
2. Takashi Taniguchi
3. Kenji Watanabe
4. Zhenhua Ni
5. A. C. Castro Neto
6. A. Mishchenko
7. P. Tan
8. A. Carvalho

Citations in the corpus

• Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap (2014, positive): “4 AW–1 which is much higher than the values reported for 2D nanosheet devices including GaSe and GaS [10, 11, 15].”
• 2D materials and van der Waals heterostructures (2016, methodology): “P. Hu et al., Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates.”