Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

By J. Yeom, Yan Wu, J. C. Selby, M. Shannon. 2005

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/122ce8b73d3c436b1955bb0544d2d1e10588d0f0