Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
By K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, Hideo Hosono. 2006
656 citations recorded by the source corpus.
View Paper: https://www.semanticscholar.org/paper/12287b23d3e70a1eac0cd07458f5b5dfa71680d3
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Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “The carrier concentration in the a-IGZO is significantly reduced to below 10(13) cm 3 by reducing partial pressure oxygen from 0 to 8 Pa, whereas it remains at 10(18) cm 3 in the a-InZnO deposited under the same conditions.(1,4) The Ga is believed to attract oxygen FIG.”
- Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors (2011, background): “materials in TFTs for large area, transparent, and/or flexible flat panel displays [5], [6].”