Measuring the degree of stacking order in graphite by Raman spectroscopy
By Luiz Gustavo Cançado, K. Takai, T. Enoki, Morinobu Endo, Y. Kim, H. Mizusaki, N. Speziali, A. Jorio, M. Pimenta. 2008
418 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1212d115768a7df9d9c4aa697379bba6ee190eb8
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Mildred S. Dresselhaus
- Antônio Gomes Souza Filho
- Rintaro Saito
- A. Jorio
- F. C. Walsh
- Mohd Ali Hashim
- C. Low
- M. H. Chakrabarti
In Materials Chemistry
- A. Jorio
- Mildred S. Dresselhaus
- Antônio Gomes Souza Filho
- Rintaro Saito
- Mohd Ali Hashim
- C. Low
- K. Takai
- Mohamed Azlan Hussain
Citations in the corpus
- Electrochemical approaches to the production of graphene flakes and their potential applications (2013, background): “9a) displayed a prominent G peak at 1583 cm 1 corresponding to the first-order scattering of the E2g vibration mode and a D band at 1311 cm 1 arising from the breathing mode of the j-point phonons of A1g symmetry [19,117].”
- Defect characterization in graphene and carbon nanotubes using Raman spectroscopy (2010, methodology): “2008), using experimental results from nanographites with different La values prepared from DLC films heat treated at different temperatures Thtt (Cançado et al. 2008).”
- Structural evolution in the graphitization process of activated carbon by high-pressure sintering (2009, background): “[33] Cancado LG, Takai K, Enoki T, Endo M, Kim YA, Mizusakim H, et al.”
- Structural analysis of polycrystalline graphene systems by Raman spectroscopy (2015, methodology): “N-layers graphene systems. 2The stacking properties of the samples used in this work have been previously investigated by X-ray diffraction and Raman spectroscopy, and the results are reported in Ref. [21]. It has been shown that for HTTs below 2300◦C (L a < 140nm), the samples do not present any ”