Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
By V. Dubrovskii, G. Cirlin, I. Soshnikov, A. Tonkikh, N. Sibirev, Yu. B. Samsonenko, V. Ustinov. 2005
264 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/11ce0caf2589054ee5e389186b416aa6e58e836d
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Optical Properties of Semiconductor Quantum Dots (2008, background): “In the intermediate range of temperature, NW growth is induced by diffusion of adatoms from the surface to the catalyst droplets and by their subsequent precipitation at the catalyst-semiconductor interface [44].”