Intense terahertz excitation of semiconductors
By S. Ganichev, W. Prettl. 2006
291 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/1176f18a5a3435a72c1014d136903aa85aa2ce71
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- High frequency electric field induced nonlinear effects in graphene (2013, background): “Application of short current pulses for THz radiation generation (Auston switch) has been developed in early 90’s [170,171] and is currently widely used for generation of THz radiation and time-domain THz spectroscopy [33,172,173].”
- A review of non-linear terahertz spectroscopy with ultrashort tabletop-laser pulses (2015, background): “Following initial demonstrations of non-linear carrier transport processes in semiconductors with narrowband molecular laser and FEL sources from the 1980s and 1990s [15,28,29], some of the first demonstrations of ultrafast THz non-linearities in semiconductor systems were conducted using the optica”
- Intense ultrashort terahertz pulses: generation and applications (2011, background): “Nonlinear behavior of semiconductors under strong THz excitation has been investigated using these types of sources [15] but temporal resolution was limited by long pulse durations or difficulties in synchronizing a femtosecond laser to an FEL source due to timing jitter.”