O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
By B. Ryu, H. Noh, Eun-Ae Choi, K. Chang. 2010
416 citations recorded by the source corpus.
We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by VO in the dielectrics. While some of VO+2 defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that VO+2 can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias.
Subfields: Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/10fa386d46a8f087b6547fd5f1c8dd345f637fb9
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Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “Among the ranges of defects, the negative bias illumination stress instability is often attributed to oxygen vacancy defects.(50,51) The possibility of an oxygen vacancy defect is when a neutral oxygen vacancy defect accepts a hole carrier to form a positive oxygen vacancy defect where an oxygen vac”