Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface

By Kohji Nakamura, T. Akiyama, T. Ito, M. Weinert, A. Freeman. 2010

144 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/10579281a3271ddd2f7c0949307ae743c3e3f754

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chshiev
2. Bernard Dieny
3. T. Kawahara
4. R. Takemura
5. Hideo Ohno
6. Kenchi Ito
7. T. Dietl

In Condensed Matter Physics

1. M. Chshiev
2. T. Kawahara
3. Bernard Dieny
4. R. Takemura
5. Hideo Ohno
6. Kenchi Ito

In Electronic, Optical and Magnetic Materials

1. Bernard Dieny
2. M. Chshiev
3. Hideo Ohno

Citations in the corpus

• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “…at FM=MgO interfaces and in MTJ, both experimentally (Shiota et al., 2009, 2012; Endo et al., 2010; Nozaki et al., 2010; Seki et al., 2011; Wang et al., 2012) and theoretically (Nakamura et al., 2010; Niranjan et al., 2010; Shimabukuro et al., 2010; Tsujikawa et al., 2011; Suzuki et al., 2013).”
• Spin-transfer torque RAM technology: Review and prospect (2012, background): “The TMR ratio increased up to 350% after annealing at 400 C, indicating that the formation of a highly oriented (001) CoFeB/MgO/CoFeB structure is essential to obtain a high TMR ratio.”