Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

By Hideo Hosono. 2006

863 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0ffa4f0924031109ddda1fefc6e68b1053f23da8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. S. Parthiban
3. Jae Kyeong Jeong
4. Sang Yeol Lee
5. S. Chang
6. Hadis Morkoç
7. Ü. Özgür
8. Daniel Hofstetter

In Electronic, Optical and Magnetic Materials

1. Jang Yeon Kwon
2. Hadis Morkoç
3. Ü. Özgür
4. Daniel Hofstetter
5. S. Parthiban
6. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. S. Parthiban
3. Sang Yeol Lee
4. S. Chang
5. Hadis Morkoç
6. Ü. Özgür
7. Daniel Hofstetter
8. Jae Sang Lee

Citations in the corpus

• Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “In general, the mixing of two or more cations with different ionic charges and sizes is effective to enhance the formation of an amorphous phase, suppressing crystallization and carrier concentration.(3) Based on this AOSs are mixing multicomponent systems.”