Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor
By S. Shishiyanu, T. Shishiyanu, Oleg Lupan. 2005
479 citations recorded by the source corpus.
Abstract NO 2 gas sensor was fabricated by successive ionic layer adsorption and reaction (SILAR) technique and rapid photothermal processing (RPP) of the Sn-doped ZnO film. The experimental results shows that tin doping of zinc oxide thin films improve the sensor element sensitivity to 1.5 ppm NO 2 in air and downshift the operating temperature. The influence of variation of Sn concentration in the chemical bath and the RPP temperature on NO 2 sensitivity of thin film sensor elements was investigated in this work. Higher sensitivity was obtained at 5–10 at.% tin concentration in the solution of ions and RPP temperature of 550–650 °C. Increasing the Sn concentration in doped ZnO samples more than 10 at.% as well as decreasing the oxygen partial pressure leads to the NO 2 gas sensitivity decrease. It looks promising to use the inexpensive tin-doped zinc oxide thin films obtained by SILAR method and RPP in smart gas sensing devices that are able to recognize gas species in low concentrations and are demanded for continuous environmental monitoring.
Subfields: Bioengineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/0fdef192f2b7c5e459fdf79a5c19fcbd0fde84fe
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Citations in the corpus
- Effect of zinc acetate concentration on the structural and optical properties of ZnO thin films deposited by Sol-Gel method (2012, background): “…such as photocatalysts by Chakrabarti et al. (2004), solar cells by Pradhan et al. (2007) and Baxter et al. (2006), thin film gas sensors (Shishiyanu et al., 2005), varistors (Suvaci and Ozer 2005), light emitting diodes (Saito et al., 2002), spintronic devices (Meron and Markovich…”
- Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, background): “In order to achieve maximum sensitivity, thin film gas sensors are often operated at elevated temperature [221,222].”