SiGe bipolar technology for automotive radar applications
By J. Bock, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, Herbert Knapp, M. Wurzer, W. Perndl and 2 more. Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004
171 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Hardware and Architecture
View Paper: https://www.semanticscholar.org/paper/0fb0b8358965bf18dfb6a9f1bd99d79b0873c649
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In Electrical and Electronic Engineering
Citations in the corpus
- Millimeter-Wave Technology for Automotive Radar Sensors in the 77 GHz Frequency Band (2012, unknown): “To achieve a good heat dissipation, the chip is mounted directly on a thick copper inlay.”
- Advanced Microwave Imaging (2012, methodology): “The process used for this chipset is a very cost-effective pure SiGe:C bipolar technology similar to the one described in [57].”
- A 77GHz 4-channel automotive radar transceiver in SiGe (2008, methodology): “The chip is fabricated in Infineon’s automotivequalified B7HF200 SiGe bipolar technology which is based on the process technology presented in [4].”