Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

By Gwan‐Hyoung Lee, Young‐Jun Yu, X. Cui, Nicholas Petrone, Chul‐Ho Lee, Min Sup Choi, Daeyeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe and 4 more. ACS Nano, 2013

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Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation (2015, background): “h-BN has also stimulated various applications in deep ultraviolet light emitters [14], protective coatings [15], and transparent electronics [16], due to its excellent mechanical strength, chemical inertness as well as nice optical transparency.”
Mechanics of freely‐suspended ultrathin layered materials (2014, background): “em showed a very large breaking stress, especially if compared to conventional 3D non-layered materials. This property makes 2D materials prospective candidates to be employed in flexible electronics [96, 97, 98, 99, 100, 101]. For instance, single-layer graphene and MoS 2 have shown very large brea”