Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.

By Yongqing Cai, Gang Zhang, Yong‐Wei Zhang. Journal of the American Chemical Society, 2013

831 citations recorded by the source corpus.

Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer MoS2 sheet and nanoribbons. In contrast to the dramatic deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS2 nanoribbons is comparable to its sheet counterpart, albeit oscillating with ribbon width. Surprisingly, a room-temperature transport polarity reversal is observed with μ of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm(2) V(-1) s(-1) in sheet, and 49.72 (h) and 190.89 (e) cm(2) V(-1) s(-1) in 4 nm nanoribbon. The high and robust μ and its polarity reversal are attributable to the different characteristics of edge states inherent in MoS2 nanoribbons. Our study suggests that width reduction together with edge engineering provide a promising route for improving the transport properties of MoS2 nanostructures.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0ecf12ce0163ab71efb245d0a07ad2ced56e3a6a

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Citations in the corpus

Graphene a promising electrode material for supercapacitors—A review (2018, background): “For instance, the resultant composite of graphene‐encapsulated Co3O4 has been reported with an ultra‐high reversible capacity around 1100 mA·h/g at its initial 10 cycles and 1000 mA·h/g after 130 cycles as illustrated in Table 5.(66) 3 4”
Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles (2020, background): “52 cm2V−1s−1 for electron and hole mobilities, respectively) [83].”
Recent Advances in the Study of Phosphorene and its Nanostructures (2017, background): “Reprinted with permission from Cai et al.(257) Permission to reuse must be obtained from the rightsholder.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “On the other hand, the predicted phonon-limited hole mobility for monolayer MoS2 is supposed to be as high as 200–270 cm2/V-s [115,117].”