Electronic properties of bilayer and multilayer graphene

By J. Nilsson, A. C. Castro Neto, Francisco Guinea, N. M. R. Peres. 2007

230 citations recorded by the source corpus.

We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent-potential approximation and some analytical results. Within the model we compute the self-energies, the density of states, and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the dc conductivity. The $c$-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0eb805d1bc5b17c79eaf5399a40c0aea7cbdd7bb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. E. Rossi
2. E. Hwang
3. S. Adam
4. D. Basov
5. Feng Wang
6. M. Fogler
7. Alessandra Lanzara
8. Yuanbo Zhang

In Materials Chemistry

1. E. Rossi
2. E. Hwang
3. S. Adam
4. Feng Wang
5. D. Basov
6. M. Fogler
7. Alessandra Lanzara
8. Yuanbo Zhang

Citations in the corpus

• Graphene based materials: Past, present and future (2011, background): “[124,128,168] and in graphene quantum dots [169], and by biasing bi-layer [21,170,171] graphene.”
• Colloquium: Graphene spectroscopy (2014, background): “There has been a rapidly increasing interest in graphene systems with more than one layer (for an early review, see Nilsson et al. (2008)).”
• The electronic properties of graphene (2007, unknown): “, 2007b) to transistors (Nilsson et al., 2008).”
• Electronic properties of graphene-based bilayer systems (2015, background): “ in the previous subsection for AA system. As the simplest approximation, we neglect trigonal warping (hopping amplitude t3) and electron-hole asymmetry (hopping amplitude t4) as it was done in Refs. [255,257,258,259,260]. This model successfully explains the major features of frequency-dependence o”
• Electronic transport in two-dimensional graphene (2010, methodology): “Then the matrix element of the scattering potential of randomly distributed screened impurity charge centers in graphene is given by (Adam and Das Sarma, 2008a; Katsnelson, 2007; Koshino and Ando, 2006; Nilsson et al., 2006b, 2008) |〈Vsk,sk′〉|2 = |vi(q)/ε(q)|2 (1 + cos 2θ)/2.”