Doping dependence of an n-type cuprate superconductor investigated by angle-resolved photoemission spectroscopy.

By N. P. Armitage, F. Ronning, D. Lu, Changyoung Kim, A. Damascelli, K. Shen, D. Feng, H. Eisaki, Zhi-xun Shen, P. Mang and 5 more. 2002

189 citations recorded by the source corpus.

We present an angle-resolved photoemission doping dependence study of the $n$-type cuprate superconductor ${\mathrm{Nd}}_{2\ensuremath{-}x}{\mathrm{Ce}}_{x}{\mathrm{CuO}}_{4\ifmmode\pm\else\textpm\fi{}\ensuremath{\delta}}$, from the half-filled Mott insulator to the ${T}_{c}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}24\mathrm{K}$ superconductor. In ${\mathrm{Nd}}_{2}{\mathrm{CuO}}_{4}$, we reveal the charge-transfer band for the first time. As electrons are doped into the system, this feature's intensity decreases with the concomitant formation of near- ${E}_{F}$ spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume $\ensuremath{\sim}x$) centered at $(\ensuremath{\pi},0)$. Further doping leads to the creation of a new holelike Fermi surface (volume $\ensuremath{\sim}1+x$) centered at $(\ensuremath{\pi},\ensuremath{\pi})$. These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the $n$-type cuprates.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/0d635badbe62120d9b56320188fe3d539a356397

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In Condensed Matter Physics

  1. Zhi-xun Shen
  2. A. Damascelli
  3. N. P. Armitage

In Electronic, Optical and Magnetic Materials

  1. Zhi-xun Shen
  2. N. P. Armitage

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