Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.

By C. Riedl, Camilla Coletti, T. Iwasaki, Alexei Zakharov, U. Starke. Physical Review Letters, 2009

893 citations recorded by the source corpus.

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 square root(3) x 6 square root(3))R30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0d5eff420e49ab27b460a005225e4e96857e4fec

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

In Materials Chemistry

Citations in the corpus

Penta-graphene: A new carbon allotrope (2015, methodology): “Proc Natl Acad Sci USA 110(47):18809–18813.”
Colloquium: The transport properties of graphene: An introduction (2010, background): “Also, the quantum Hall effect in graphene has been observed at room temperature (Novoselov et al., 2007) and recently in epitaxial graphene as well (Wu et al., 2009), which can be produced in quasi-free standing form (Riedl et al., 2009).”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “Hydrogen intercalation studies by ARPES and energy-dispersive XPEEM measurements confirm that the buffer layer is converted to a graphene layer [96].”
Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor (2015, background): “5 eV indicates that the graphene grown is neutrally charged [26].”
Giant Faraday rotation in single- and multilayer graphene (2010, methodology): “The first sample underwent hydrogen passivation of the Si dangling bond”
Production and processing of graphene and related materials (2020, background): “LEEM Transition from a LEEM-I(V) curve with one dip to a spectrum with two dips [598, 599, 635]”
Graphene Photonics and Optoelectroncs (2010, background): “, and electronic decoupling from the underlying SiC substrate can be achieved by hydrogen treatmen”
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, methodology): “ARPES and XPS results for the buffer layer and QFMLG samples are in line with [15] and [17] and confirm the validity of the preparation protocols.”
Colloquium: Graphene spectroscopy (2014, background): “Hydrogen intercalation leads to decoupling of graphene from the substrate (Riedl et al., 2009), as evidenced by the ARPES dispersions [Figs.”