On‐Chip Integrated Waveguide Amplifiers on Erbium‐Doped Thin‐Film Lithium Niobate on Insulator

By Junxia Zhou, Youting Liang, Zhaoxiang Liu, W. Chu, Haisu Zhang, Difeng Yin, Z. Fang, Rongbo Wu, Jianhao Zhang, Wei Chen and 4 more. Laser & Photonics reviews, 2021

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On‐chip light amplification with integrated optical waveguide fabricated on erbium‐doped thin‐film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography‐assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small‐signal‐gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm−1. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0d44223ab5e87dafefa8b873cc6d1d8491df4913

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Citations in the corpus

• Advances in lithium niobate photonics: development status and perspectives (2022, methodology): “Rare earth doped devices have not received enough attention, although there is a potential for integrated amplifiers/lasers, and some results have been demonstrated recently.(33,330,331) Compared with heterogeneously integrated III-V amplifiers/ lasers, there are still some gaps to be closed in the ”