The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

By A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, Carl W. Magnuson, S. McDonnell, Luigi Pietro Maria Colombo, E. Vogel, Rodney S. Ruoff, Robert M. Wallace. 2011

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The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene (2013, background): “It is well known that solvent rinses leave a layer of polymeric residue [9–11], and that these can be largely removed by thermal annealing in gaseous atmospheres such as Ar [12–14], H2 [15], H2/Ar [5,16], N2, or in vacuum [7,17,18].”
Water on graphene: review of recent progress (2018, background): “Despite charge carriers in transferred CVD graphene achieving mobilities of ~2000 cm2/Vs at room temperature and benefit from back-gating when the substrate is Si/SiO2, the transferred graphene membrane can suffer from cracks, wrinkles, polymer residues and other transferinduced defects, all of whic”