Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices
By R. Scheer, H. Schock. 2011
398 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/0cdd672aeff2f399599cdf0eb7b136ecda476c49
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Citations in the corpus
- Ink formulation and low‐temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se)2 solar cells from sulfide nanocrystal inks (2013, background): “In a solar cell where trap assisted non-radiative recombination in the space charge region is dominant, the diode quality factor should be equal to two [25].”
- Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications (2017, background): “The highest conversion efficiencies in CIGS solar cells have been commonly achieved using chemical bath deposited (CBD) CdS as a buffer layer [49].”
- Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials (2017, background): “[22] Device simulation and experimental results in chalcopyrites and CdTe demonstrate that sub-nanosecond minority carrier lifetimes are sufficient to achieve power conversion efficiencies (PCE) up to ≈13%,[34,40] representing the performance level currently reported for kesterites.”
- Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells (2015, methodology): “For these simulations, we again used the parameters as listed in Table 8.1 of Ref [39], in particular an absorber carrier lifetime of 10 ns. Figure 5(a) presents solar cell parameters for a sole back surface gradient with varying kink position (remember that dk is the distance of the kink from the f”
- Towards low-cost, environmentally friendly printed chalcopyrite and kesterite solar cells (2014, neutral): “10 In CIGSSe, the rst-principle investigation showed that the indium-on-copper-antisites (In Cu ) and the copper vacancy ( V Cu ) are, respectively, the dominant donor and acceptor defects.”
- Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials (2017, background): “In general, solar cell open circuit voltage (Voc) depends on the device reverse saturation current,[37,129] which in turn derives from recombination at bulk intrinsic/extrinsic point defects,”