Low-temperature investigations of single silicon vacancy colour centres in diamond

By E. Neu, C. Hepp, Michel Hauschild, S. Gsell, M. Fischer, H. Sternschulte, D. Steinmueller-Nethl, M. Schreck, C. Becher. 2012

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We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high-quality, low-stress CVD diamond film by using temperature-dependent luminescence spectroscopy in the temperature range 5–295 K. We investigate in detail the temperature-dependent fine structure of the zero-phonon line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature-dependent homogeneous broadening and blue shifts by about 20 cm−1 upon cooling from room temperature to 5 K. We employ excitation power-dependent g(2) measurements to explore the temperature-dependent internal population dynamics of single SiV centres and infer mostly temperature-independent dynamics.

Subfields: Atomic and Molecular Physics, and Optics, Geophysics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0cd5f95dd0d04f42493c1a2441d4104c074bc67b

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Electron–phonon processes of the silicon-vacancy centre in diamond (2014, methodology): “cence lifetime of the excited state as a function of temperature. Previous experiments have reported excited state lifetimes in the ˘1ns to 4ns range along with various estimates of the quantum yield [30, 32, 33, 34, 35, 7]. Figure 1(b) shows potential radiative ( r) and non-radiative ( nr) processe”