Spin-dependent tunnelling in magnetic tunnel junctions

By E. Tsymbal, O. Mryasov, P. Leclair. 2003

542 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/0b66506d07957c50add41543b90520f0480d7fcc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Manchon
2. C. Marrows
3. A. Barthélémy
4. Manuel Bibes
5. Y. Tserkovnyak
6. M. Tsoi
7. T. Ono
8. V. Baltz

In Electronic, Optical and Magnetic Materials

1. A. Barthélémy
2. Manuel Bibes
3. A. Edelstein
4. Y. Tserkovnyak
5. C. Marrows
6. James E. Lenz
7. J. Scott

Citations in the corpus

• Spin routes in organic semiconductors. (2009, unknown): “Similarly, the extension of the band-symmetry model developed for TMR (inorganic) devices should be treated with caution when applied to inorganic spintronic”
• Magnetic sensors and their applications (2006, background): “c) Magnetic tunnel junction sensors: Magnetic tunnel junctions (MTJ) or spin dependent tunneling (SDT) sensors [37], [38], first fabricated 1995, have a structure similar to the four layer structure described above in GMR sensors.”
• Antiferromagnetic spintronics (2016, background): “Its magnitude is governed by the spin polarization of the density of states at the interface between the magnetic electrodes and the tunnel barrier (Tsymbal, Mryasov, and LeClair, 2003).”
• Oxide Spintronics (2007, background): “report on the TMR effect [1], [8], [9].”
• Spin-polarised currents and magnetic domain walls (2005, background): “In the past year unprecedentedly large TMR ratios have been reported by a few groups using MgO barriers.”