Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects

By C. Canedy, Hao Li, S. Alpay, L. Salamanca-Riba, A. Roytburd, Ramamoorthy Ramesh. 2000

237 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0b5c5567b185eee49494edcd299745ecca409e99

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. K. Rabe
2. J. Scott
3. M. Dawber
4. C. Eom
5. Long-qing Chen
6. Darrell Schlom
7. John Robertson

In Electronic, Optical and Magnetic Materials

1. K. Rabe
2. Long-qing Chen
3. Darrell Schlom
4. J. Scott
5. M. Dawber
6. J. Triscone
7. C. Eom
8. S. Streiffer

In Materials Chemistry

1. K. Rabe
2. J. Scott
3. Darrell Schlom
4. J. Triscone
5. Long-qing Chen
6. M. Dawber
7. C. Eom
8. S. Streiffer

Citations in the corpus

• Physics of thin-film ferroelectric oxides (2005, background): “They have also been argued to contribute to the degradation of the dielectric response in thin films relative to bulk values (Canedy et al., 2000).”
• Strain Tuning of Ferroelectric Thin Films (2007, background): “, the ∼1011 dislocations cm−2 observed in partially relaxed ferroelectric films (40, 41)] are avoided.”