Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends

By E. Ojefors, Bernd Heinemann, Ullrich R. Pfeiffer. IEEE transactions on microwave theory and techniques, 2012

140 citations recorded by the source corpus.

Subfields: Astronomy and Astrophysics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0a6d14b0541f43f507d950d8945bada1465c5981

How researchers see this paper

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In Electrical and Electronic Engineering

1. Bernd Heinemann
2. J. Grzyb
3. Ullrich R. Pfeiffer

Citations in the corpus

• Femtosecond-Long Pulse-Based Modulation for Terahertz Band Communication in Nanonetworks (2014, unknown): “For the time being, monolithic integrated circuits based on Silicon [19], Silicon Germanium [20], Indium Phosphide [21] and Gallium Nitride [22], have been demonstrated at frequencies between 0.1 and 1 THz.”
• A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology (2016, methodology): “A differential 90 hybrid based on two broadside coupled coplanar striplines (CPSs) similar to reported in [19] is used.”
• Terahertz band: Next frontier for wireless communications (2014, unknown): “First attempts to realize SiGe-based front-ends in the THz Band have already been demonstrated at 200 to 300 GHz [36] and even up to 840 GHz [37].”