Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

By PingAn Hu, Zhenzhong Wen, Lifeng Wang, P. Tan, Kai Xiao. ACS Nano, 2012

851 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/09ee9aa04f63fd3506b4e9e0925fe50652e68a8e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Ju Li
2. K. Novoselov
3. Zhenhua Ni
4. A. C. Castro Neto
5. Kristian Sommer Thygesen
6. Takashi Taniguchi
7. Kenji Watanabe
8. T. Olsen

In Materials Chemistry

1. K. Novoselov
2. Takashi Taniguchi
3. Kenji Watanabe
4. Zhenhua Ni
5. A. C. Castro Neto
6. A. Mishchenko
7. Kristian Sommer Thygesen
8. P. Tan

Citations in the corpus

• Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap (2014, positive): “4 AW–1 which is much higher than the values reported for 2D nanosheet devices including GaSe and GaS [10, 11, 15].”