Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices
By A. Bousseksou, G. Molnár, P. Demont, J. Ménegotto. 2003
191 citations recorded by the source corpus.
Subfields: Biophysics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/09ee3944e5641dee4079d5ec7da71df372b8f82e
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Emerging trends in spin crossover (SCO) based functional materials and devices (2017, background): “Although translating and preserving switching behaviour of an SCO complex at single molecular level or in thin film architecture is challenging, mainly due to the cooperative nature of the SCO phenomenon in bulk or 3D solid state mediated by intermolecular interactions, relentless efforts have been ”
- Room-temperature spin-transition iron compounds (2009, background): “Remarkable examples are, for instance, the observation of a switchable dielectric constant in a material controlled by the spin state of its spin transition centers [11], or the ability to modify the spin transition properties of a nanoporous framework by changing the nature of its guest molecules [”
- Charge Transport and Electrical Properties of Spin Crossover Materials: Towards Nanoelectronic and Spintronic Devices (2016, background): “for a series of spin crossover materials [32].”