Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

By C. Fu, Ting Zhu, Yintu Liu, Hanhui Xie, Xinbing Zhao. 2015

449 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/09e9b13951ceabde476f0e55f9ce5d733efe8277

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Xun Shi
2. Lidong Chen
3. C. Uher
4. Jihui Yang
5. Li-dong Zhao
6. G. J. Snyder
7. Y. Pei

In Electronic, Optical and Magnetic Materials

1. Xun Shi
2. C. Uher
3. Lidong Chen
4. David J. Singh

In Materials Chemistry

1. Lidong Chen
2. Xun Shi
3. C. Uher
4. Wenqing Zhang
5. Jihui Yang
6. David J. Singh
7. Li-dong Zhao
8. M. Kanatzidis

Citations in the corpus

• Review of current high-ZT thermoelectric materials (2020, methodology): “[308] Fu C, Zhu T, Liu Y, Xie H, Zhao X (2015) Band engineering of high performance p-type FeNbSb based halfHeusler thermoelectric materials for figure of merit zT[1.”
• Recent advances in high-performance bulk thermoelectric materials (2016, background): “Among prospective HH alloys are also p-type FeMSbbased (M=V, Nb) materials.(198,199) While pure FeMSb are small band gap (0.”