Gallium Nitride Nanowire Nanodevices

By Yu Huang, Xiangfeng Duan, Yi Cui, Charles M. Lieber. 2002

839 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/0980b3181b5e155898b87da0a60b7b4399746406

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Peidong Yang
2. Joshua E. Goldberger
3. M. Law
4. Lars-Erik Wernersson
5. Tomas Bryllert
6. G. Khan
7. A. Basumallick
8. J. Sarkar

In Condensed Matter Physics

1. Gerhard Klimeck
2. Peidong Yang
3. M. Law
4. Joshua E. Goldberger
5. Mark A. Reed
6. Lars Samuelson
7. Aleksandar Vacic
8. Eric Stern

In Electronic, Optical and Magnetic Materials

1. M. Law
2. Peidong Yang
3. Joshua E. Goldberger
4. G. Khan
5. Lars Samuelson
6. A. Basumallick
7. J. Sarkar

Citations in the corpus

• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, neutral): “GaNb [0 0 0 1] c-axis Polar direction [47, 71, 72, 73] 〈10–10〉 m-axis Nonpolar direction [11, 47, 74, 75] 〈11–20〉 a-axis Nonpolar direction [73, 75, 76]”
• Nanowires: properties, applications and synthesis via porous anodic aluminium oxide template (2007, background): “The field effect transistors made of nanowires exhibit remarkably modified conductance behaviour (Chung et al 2000; Cui et al 2000; Huang et al 2002) and they are very attractive because of their morphological advantages.”
• Electronic properties of silicon nanowires (2005, background): “NWs are synthesized from a range of different materials [1], such as CdS and ZnS [2], GaN [3], p-GaN [4], Si, Ge [5], [6], or InP [7], [8].”
• SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, background): “Prototype nanowire field-effect transistors (FETs) include Si (155), InP (156), n-GaN (44), p-GaN (25), In2O3 (157), and ZnO (158) examples.”