III-N-V semiconductors for solar photovoltaic applications

By J. Geisz, Daniel J. Friedman. 2002

317 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/08ee1f48dc7db5201c918e5c22ebfeaf2745a3ba

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In Atomic and Molecular Physics, and Optics

1. Magnus Borgström
2. J. Wallentin

In Biomedical Engineering

1. J. Wallentin
2. Magnus Borgström

In Electrical and Electronic Engineering

1. Magnus Borgström
2. J. Wallentin

Citations in the corpus

• Doping of semiconductor nanowires (2011, background): “Due to small Si lattice constant, it is difficult to grow highquality III-Vs films on Si substrates [21].”
• The potential of III‐V semiconductors as terrestrial photovoltaic devices (2007, background): “For a tandem cell, by optimising the thickness of the top junction for a particular bandgap combination, a maximum conversion efficiency of 36% (AM1 5) would be obtained by choosing semiconductors with a bandgap of 1 1 eVand 1 7 eV, respectively.(37) Si has a bandgap of 1 1 eV, but it’s difficult to”