The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells
By A. Kanevce, W. Metzger. 2009
183 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/08ed455489af17b2b58fe4f01d9fdaef23f333c2
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared (2013, background): “ferent carrier transport in n- and p-type heterojunction solar cells due to the different band structure seen by minority carriers [24], [25].”
- Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, unknown): “1(c) ] [19], [45].”
- Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells (2016, background): “Recently researchers focused on the carrier transport across the indium-tin-oxide (ITO)/p-type amorphous silicon ((p)a-Si:H) junction [3, 4].”