Single-electron tunneling in InP nanowires

By Desiree Franceschi, V. Dam, E. Bakkers, L. F. Feiner, L. Gurevich, L. Kouwenhoven. 2003

141 citations recorded by the source corpus.

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ? 10?k?, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 ?m. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ? 1?meV. We also demonstrate energy quantization resulting from the confinement in the wire.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/084454dffe46050df6391564bd26c09988761d90

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Biomedical Engineering

In Electrical and Electronic Engineering

Citations in the corpus

SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, background): “However, a recent report (152) of strong Coulomb blockade behavior in monolithic InP nanowires at 0.”
Transport phenomena in nanofluidics (2008, background): “De Franceschi et al., 2003; Thelander et al., 2003; Bjork et al., 2004; Zhong et al., 2005".”