A Flexible Reduced Graphene Oxide Field‐Effect Transistor for Ultrasensitive Strain Sensing

By Tran Quang Trung, N. T. Tien, Do-Il Kim, Mi Jang, O. Yoon, Nae-Eung Lee. 2014

152 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/082ca5783e96532f33900f4ec8806ef8a7327fd9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. D. Papageorgiou
2. I. Kinloch
3. R. Young
4. A. Dideikin
5. A. Vul’

In Electrical and Electronic Engineering

1. D. Papageorgiou
2. R. Young
3. I. Kinloch
4. A. Dideikin
5. A. Vul’

In Materials Chemistry

1. D. Papageorgiou
2. I. Kinloch
3. R. Young
4. A. Dideikin
5. A. Vul’

Citations in the corpus

• Mechanical properties of graphene and graphene-based nanocomposites (2017, background): “[196] prepared strain sensors based on reduced GO field effect transistors (rGO-FET) that were found to detect strain at extremely low levels, as low as 0.”
• Graphene Oxide and Derivatives: The Place in Graphene Family (2019, background): “It opens the wide area of applications in future electron devices including not only flexible and transparent circuit interconnections [70] but active elements like field effect transistors (FETs) [71, 72] and organic light emitting devices (OLEDs) [73, 74].”