Sub-nanosecond switching of a tantalum oxide memristor

By A. Torrezan, John Paul Strachan, G. Medeiros-Ribeiro, R. S. Williams. Nanotechnology, 2011

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Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies (2014, background): “Note that the actual write time of a practical memristor is significantly faster [25].”
Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022, background): “RRAMs can be switched with write energy down to ~0.1 pJ ( 5 , 38 ).”
A novel true random number generator based on a stochastic diffusive memristor (2017, background): “…14 – 16 , or resistive switching devices, have been proposed and demonstrated for a broad spectrum of applications 16 – 19 because of their attractive properties, such as low power consumption 20 , fast switching speed 21 , high endurance 22 , excellent scalability 23 , and CMOS-compatibility 24 .”
Logic Design Within Memristive Memories Using Memristor-Aided loGIC (MAGIC) (2016, background): “The read and write times can be as fast as 120 ps [26], [27].”
MRL — Memristor Ratioed Logic (2012, background): “The read and write time for these devices can be as fast as one nanosecond [6].”
State Dynamics and Modeling of Tantalum Oxide Memristors (2013, methodology): “Thus, a very small increase in applied voltage can lead to orders of magnitude faster switching, as observed by other researchers [7], including in the case of tantalum oxide [9].”