Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.

By B. Baugher, H. Churchill, Yafang Yang, P. Jarillo-Herrero. Nano letters (Print), 2013

602 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/075dd9459745253edea4f0c42fb245c4d4cc7cdd

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In Materials Chemistry

1. Mark C. Hersam
2. Vinod K. Sangwan
3. T. Marks
4. Deep Jariwala
5. Lincoln J. Lauhon
6. A. Allain
7. Dmitry Ovchinnikov
8. Dumitru Dumcenco

Citations in the corpus

• Electrical transport properties of single-layer WS2. (2014, background): “and back-gates were observed.(16) Demonstration of high-performance devices in the back-gated geometry,(16,17) with electron mobilities of >60 cm(2) V 1 s 1 at room tempera-”