270 kVA Solid State Transformer Based on 10 kV SiC Power Devices

By Tiefu Zhao, Liyu Yang, Jun Wang, Alex Q. Huang. 2007 IEEE Electric Ship Technologies Symposium, 2007

133 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/06247415528ed40239d179a00417ac798b965bf8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jonas E. Huber
2. J. W. Kolar
3. Alex Q. Huang
4. Yun Wei Li
5. Nie Hou
6. Zhan Wang

Citations in the corpus

• Design and development of Generation-I silicon based Solid State Transformer (2010, background): “However, the traditional 60Hz transformer is replaced by a high frequency transformer to provide isolation and step up/down function plus the power electronics converters, which are key to achieve size and weight reduction and the power quality improvement [1-7].”
• Optimum Number of Cascaded Cells for High-Power Medium-Voltage AC–DC Converters (2017, background): “Considering recent advances in high-voltage (HV) silicon-carbide (HV SiC) power semiconductor technology, which have resulted in 4H–SiC IGBTs with blocking voltages of 15 kV and beyond [23], [24], SSTs based on 10 kV [25] or 15 kV [26] devices and conventional singlecell two-level or three-level con”