Epitaxial III-V nanowires on silicon

By T. Mårtensson, C. Svensson, B. Wacaser, M. Larsson, W. Seifert, K. Deppert, A. Gustafsson, L. Wallenberg, Lars Samuelson. 2004

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Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “III–V nanowires on Si substrates [28]) that would otherwise be extremely difficult as two-dimensional thin films.”
III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011, background): “Since Märtensson’s pioneering work on As/P-related III–Vs NWs was reported in 2004 [12], several tens of papers regarding the III–V NW growth on Si substrates have been published”
Doping of semiconductor nanowires (2011, background): “A few years ago it was demonstrated that III-V NWs can be grown epitaxially on Si substrates [7], and more recently graphene [22], which could allow much lower production costs than”
III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “The growth of some of these ternary compound semiconductor nanowires, most notably InGaP, AlGaAs and GaAsP, has already been demonstrated on Si or other substrates [175–181].”
Nanowires With Promise for Photovoltaics (2011, background): “Consequently, successful epitaxial growth of several III–V NWs on Si with a lattice mismatch of up to 11.6% has been demonstrated [ 22 ], [23].”