Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'

By Dalibor Biolek, Zdeněk Biolek, Viera Biolková. 2011

140 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0481e8c4badcc4061cacfa566876efef16994675

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Shahar Kvatinsky
2. Avinoam Kolodny
3. Guy Satat
4. Nimrod Wald
5. Eby G. Friedman
6. Uri C. Weiser

In Electrical and Electronic Engineering

1. Shahar Kvatinsky
2. Avinoam Kolodny
3. Guy Satat
4. Nimrod Wald
5. Uri C. Weiser
6. Eby G. Friedman

Citations in the corpus

• TEAM: ThrEshold Adaptive Memristor Model (2013, methodology): “While there are discussions in the literature about specific definitions [29, 30], in this paper we use the term “memristive device” to describe all devices within these categories.”
• Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies (2014, background): “Although the definition of memristive devices is broader than the definition of memristors, it is common to use the term memristor for all memristive devices [10], [11].”