Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene
By L. Panchakarla, K. Subrahmanyam, S. Saha, A. Govindaraj, H. R. Krishnamurthy, Umesh V. Waghmare, C. Rao. 2009
1,663 citations recorded by the source corpus.
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/046086d3848111e93072f08a95e84559b0d13c01
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In Materials Chemistry
- Hui‐Ming Cheng
- Feng Li
- Zhong‐Shuai Wu
- W. Ren
- R. Vajtai
- C. Wong
- Damilola O. Runsewe
- Nery Villegas‐Escobar
Citations in the corpus
- A simple method to synthesize continuous large area nitrogen-doped graphene (2012, background): “The third was the arc discharge between carbon electrodes in the presence of the compounds containing nitrogen such as pyridine [21]; And the last one was the growth of N-doped graphene from polymer and melamine [22].”