Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

By O. V. Erve, Aubrey T. Hanbicki, M. Holub, Connie H Li, C. Awo-Affouda, P. Thompson, B. Jonker. 2007

227 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/04462d8a58417285dbb14a22bc54c04e7789fee9

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. M. Weng
2. M. Wu
3. Jian‐Hua Jiang

In Electrical and Electronic Engineering

1. M. Weng
2. M. Wu
3. Jian‐Hua Jiang

Citations in the corpus

• Spin dynamics in semiconductors (2010, methodology): “Robust electric spin injection through a hot-electron spin valve [149, 150, 279, 280, 282, 1048–1054] or Schottky tunneling barrier contact [281, 1058, 1073, 1074] into silicon has been proposed and realized.”