From Bulk to Monolayer MoS2: Evolution of Raman Scattering

By Hong Li, Qing Zhang, C. C. Yap, B. Tay, Teo Hang Tong Edwin, A. Olivier, D. Baillargeat. 2012

3,942 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0433f79965e1c371c5635c3d59146a676bce05b2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Mark C. Hersam
2. Edmund J. R. Kelleher
3. R. I. Woodward
4. Maurizio Donarelli
5. A. Di Bartolomeo
6. F. Torrisi
7. Filippo Giubileo
8. Meng Zhang

In Materials Chemistry

1. Mark C. Hersam
2. Edmund J. R. Kelleher
3. R. I. Woodward
4. Qing Zhang
5. R. Ganatra
6. A. Di Bartolomeo
7. Filippo Giubileo
8. Han Wang

Citations in the corpus

• Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity (2015, background): “ Si/SiO 2 substrate is shown in Figure 1b. The Raman peaks corresponding to E1 2g and A 1g modes of MoS 2 locate at 383.4 cm -1 and 404.6 cm-1, respectively, indicating the monolayer nature of MoS 2 .[39] Figure 1c shows the schematic fabrication processes and optical microscopy (OM) image of MoS 2 ”
• Interlayer interactions in anisotropic atomically thin rhenium diselenide (2015, background): “Atomically thin ReSe2 layers have more than ten measured Raman peaks while MoS2 flakes only have two high frequency Raman active peaks [45], which are attributed to the E2g mode and A1g mode.”