Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- $\mu\hbox{m}$ Infrared Wavelength Range
By M. Nedeljkovic, Richard A. Soref, Goran Z. Mashanovich. IEEE Photonics Journal, 2011
233 citations recorded by the source corpus.
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/042d6cb3d7f8ddf7f33f6d248119c1fa95e2bb72
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Citations in the corpus
- Germanium-based integrated photonics from near- to mid-infrared applications (2018, unknown): “The extension of this effect in the MIR has been theoretically evaluated first in Si [138] and then in Ge [139].”
- Mid-infrared integrated photonics on silicon: a perspective (2017, methodology): “[154, 155] reveals deficiencies of the Drude model when applied to real material systems such as Si and Ge (Figure 10).”