A High-Frequency Resonant Inverter Topology With Low-Voltage Stress

By Juan Rivas, Yehui Han, Olivia Leitermann, Anthony Sagneri, David J. Perreault. IEEE transactions on power electronics, 2008

200 citations recorded by the source corpus.

This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype inverter is described that switches at 30 MHz and provides over 500 W of radio frequency power at a drain efficiency above 92%. It is expected that the inverter will find use as a building block in high-performance dc-dc converters among other applications.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/033b4d8201d771006a620878cab2ec957114e7db

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

Citations in the corpus

Opportunities and Challenges in Very High Frequency Power Conversion (2009, methodology): “Notice the trapezoidal shape of the drain to source voltage in each case, which is determined by the selection of passive components as explained in [ 73 ].”
COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, methodology): “14, with a clear increase in EDISS between the sine, square, and Class-Φ2 waveshapes.”
Evaluation of Magnetic Materials for Very High Frequency Power Applications (2008, background): “, inductances of tens to hundreds of nanoHenries [1], [2], [13]), and the correspondingly small values of resonant capacitances (tens to hundreds of picoFarads), parasitic capacitances of the measurement circuit and voltage probes can have a significant impact on the resonant frequency.”