Band gap and Schottky barrier heights of multiferroic BiFeO3

By S. Clark, John Robertson. 2007

384 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/032344a4dbadb8150860e622216c543a5b1eae3b

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In Condensed Matter Physics

1. F. Rosei

In Electronic, Optical and Magnetic Materials

1. M. Alexe

In Materials Chemistry

1. Jinsong Huang
2. Yong-bo Yuan
3. Juan Bisquert
4. M. Alexe
5. F. Rosei
6. T. Kirchartz
7. N. Park
8. H. Snaith

Citations in the corpus

• Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion (2016, background): “For BiFeO3 the value S = 0.23 has been obtained, so that the barrier of Pt will be 0.95 eV and the barrier to a typical conducting oxide would be 0.9 eV (Clark and Robertson, 2007).”